Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm Node

Process variability is getting ever more critical for aggressively scale More Moore devices in nanoelectronics. Effects from various sources of variations influence each other and lead to variations of the electrical, thermal and mechanical behavior of devices, interconnects and circuits.

Modelling and simulation (TCAD) allows us to investigate the impact of process variations and trace their effects on subsequent process steps and on devices and circuits.

Within SUPERAID7 we therefore

■  established a software system for the simulation of the impact of systematic and statistical process variations on advanced More Moore devices and circuits, down to the 7 nm node and below, including interconnects,

■  improved physical models and extend compact models,

■  studied advanced device architectures such as TriGate/ΩGate FETs or stacked nanowires, including alternative channel materials.

Project start / end: January 1, 2016 / December 31, 2018

Last update of webpage: January 17, 2020